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Ion-Induced Growth of Whiskers on Sn Films

Published online by Cambridge University Press:  28 February 2011

D. B. Poker ,
J. Schubert  and
B. Stritzker
D. B. Poker
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Schubert
Affiliation:
Institut fuer Festkoerperforschung der Kernforschungsanlage Juelich, D-5170 Juelich, Federal Republic of Germany
B. Stritzker
Affiliation:
Institut fuer Festkoerperforschung der Kernforschungsanlage Juelich, D-5170 Juelich, Federal Republic of Germany
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Abstract

Whiskers have been observed to form on thin films (1000–2000 Å) of Sn following implantation of 20-keV H or He at temperatures below 150 K. The morphology of the whiskers following growth was examined using scanning electron microscopy (SEM) to illuminate the possible growth modes. In an effort to obtain support for either of several models of the growth process, the region near the base of the whiskers was examined for evidence of depletion or extrusion. No evidence of depletion was observed. The whiskers could be classified into two types: those that were supported on pedestals, a short transition region at the base of the whisker; and those without pedestals, which rose abruptly from the film with no transition. A novel structure has been observed on Sn films that were coated with 500 Å of Au/Pd to enhance the SEM image. The structure consists of a thin, planar surface several microns in length, oriented perpendicular to the substrate. The structures did not appear immediately after coating, but were present after storage in air for one month.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 529
Copyright
Copyright © Materials Research Society 1987

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References

1. Stritzker, B. and Ochmann, F., Nucl. Instrum. and Methods B7/8, 135 (1985).CrossRefGoogle Scholar
2. Poker, D.B., Schubert, J., Alexandrou, A., Froehlingsdorf, J., and Stritzker, B., Nucl. Instrum. and Methods, in press.Google Scholar
3. Growth and Perfection in Crystals, Proceedings of the International Conference on Crystal Growth, Cooperstown, NY, 27–29 August 1958 (John Wiley and Sons, NY, 1958).Google Scholar
4. Carter, G., Nobes, M.J., and Whitton, J.L., Appl. Phys. A 38, 77 (1985); G.K. Wehner, J. Vac. Sci. Technol. A3, 1821 (1985); R. Thomas and R.W. Calabrese, Procee-d-ings of the 21st Annual Conference on Reliability Physics, Phoenix, Arizona, 5–7, 1983, p. 1.Google Scholar
5. Practical Scanning Electron Microscopy, eds. Goldstein, J.I. and Yakowitz, H., (Plenum Press, New York 1975) p. 55.CrossRefGoogle Scholar