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Ion-Beam-Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Y. S. Tsuo ,
X. J. Deng ,
Y. Xu ,
A. K. Barua ,
S. Asher  and
S. K. Deb
Y. S. Tsuo
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
X. J. Deng
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
Y. Xu
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
A. K. Barua
Affiliation:
Indian Association for the Cultivation of Science, Calcutta, India 700032
S. Asher
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
S. K. Deb
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
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Abstract

A Kaufman ion-beam source has been used to study the rehydrogenation and postdeposition hydrogenation of amorphous silicon. In the rehydrogenation study, hydrogen atoms were implanted into glow-discharge-deposited amorphous silicon materials in which the hydrogen content had been driven out by heating. In the posthydrogenation study, amorphous silicon samples with no hydrogen content detectable by infrared absorption and no photoconductivity were used as the starting material. These materials were deposited by thermal CVD, magnetron sputtering, or RF glow discharge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 153
Copyright
Copyright © Materials Research Society 1988

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References

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