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Ion-Beam-Driven Amortization of Ca2La8 (SiO4)6O2 Single Crystals

Published online by Cambridge University Press:  15 February 2011

W. J. Weber ,
N. J. Hess  and
L. M. Wang
W. J. Weber
Affiliation:
Pacific Northwest Laboratory, P.O. Box 999, Richland, WA 99352, USA
N. J. Hess
Affiliation:
Pacific Northwest Laboratory, P.O. Box 999, Richland, WA 99352, USA
L. M. Wang
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, NM 87131, USA
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Abstract

Single crystals of Ca2La8(SiO4)6O2, with 1% Nd substituted for La, were irradiated with 0.8 MeV Ne+ and 1.5 MeV Kr+ ions over the temperature range from 15 K to 773 K. The irradiations were carried out using the HVEM-Tandem Facility at Argonne National Laboratory. The structural changes and the ion fluence for complete amorphization were determined by in situ transmission electron Microscopy. The ion fluence for complete amorphization increased with temperature in two stages associated with defect annealing processes. The critical temperature for amorphization increased from -360 K for 0.8 MeV Ne+ to -710 K for 1.5 MeV Kr+. During in situ annealing studies, irradiation-enhanced recrystallization was observed at 923 K. Spatially-resolved fluorescence spectra of the Nd ion excited with 488.0 nm laser excitation showed marked line-broadening toward the center of the amorphous regions. Initial Measurements indicate the subtle shifts of the 9I9/2 groundstate energy levels can be measured by pumping directly into the excited state 4F3/2 Manifold suggesting that the line broadening observed originates from a distribution of geometrically distorted Nd sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 435
Copyright
Copyright © Materials Research Society 1994

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References

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