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Ion-Beam Assist Nano-Texturing of Films

Published online by Cambridge University Press:  01 February 2011

Vladimir Matias ,
Chris Sheehan  and
Alp T. Findikoglu
Vladimir Matias
Affiliation:
vlado@lanl.gov, Los Alamos National Laboratory, MPA-STC, Mail Stop T004, Los Alamos, NM, 87545, United States, 505-663-5564, 505-663-5550
Chris Sheehan
Affiliation:
sheehan@lanl.gov, Los Alamos National Laboratory, MPA-STC, Mail Stop T004, Los Alamos, NM, 87545, United States
Alp T. Findikoglu
Affiliation:
findik@lanl.gov, Los Alamos National Laboratory, MPA-STC, Mail Stop T004, Los Alamos, NM, 87545, United States
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Abstract

We present an ion-beam based fabrication method for growth of single-crystal-like films that does not utilize epitaxy on single crystal substrates. We use ion-beam assisted texturing to obtain biaxial crystalline alignment in a film. This ion-beam assisted deposition (IBAD) texturing can be done on arbitrary, but smooth substrates, including flexible polycrystalline metal tapes. With IBAD texturing of MgO and subsequent homoepitaxial growth we have demonstrated an in-plane mosaic spread FWHM as low as 2° and out-of-plane alignment of 1°. The deposition system we use includes reel-to-reel tape transport for a linear transport of substrate materials through the deposition zones. This allows for high-throughput experimentation via a linear combinatorial experimental design.

Keywords

ion-beam assisted depositiontexturefilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1020: Symposium GG – Ion-Beam-Based Nanofabrication , 2007 , 1020-GG02-04
Copyright
Copyright © Materials Research Society 2007

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References

1. Harper, J.M.E. et al. , Nucl. Instr. Meth. Phys. Res. B7/8, 886 (1985).Google Scholar
2. Yu, L.S., Harper, J.M.E., Cuomo, J.J. and Smith, D.A., Appl. Phys. Lett. 47, 932 (1985).Google Scholar
3. Iijima, Y et al. , Appl. Phys. Lett. 60, 769 (1992).Google Scholar
4. Wang, C.P. et al. , Appl. Phys. Lett. 71, 2955 (1997).Google Scholar
5. Matias, V. and Gibbons, B.J., Rev. Sci. Instr. to be published (2007).Google Scholar
6. Arendt, P.N., Foltyn, S.R., Mater. Res. Soc. Bulletin 29, 543(2004).Google Scholar
7. Findikoglu, A.T. et al. , J. Mater. Res. 19 501 (2004).Google Scholar
8. Matias, V et al. , IEEE Trans. Appl. Supercon. to be published (2007).Google Scholar