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Ion-Assisted Pulsed Laser Deposition of Cubic Boron Nitride on Si (100) Substrates

Published online by Cambridge University Press:  01 January 1992

T. A. Friedmann ,
K. F. Mccarty ,
E. J. Klaus ,
H. A. Johnsen ,
D. L. Medlin ,
M. J. Mills ,
D. K. Ottesen  and
R. H. Stulen
T. A. Friedmann
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
K. F. Mccarty
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
E. J. Klaus
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
H. A. Johnsen
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
D. L. Medlin
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
M. J. Mills
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
D. K. Ottesen
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
R. H. Stulen
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
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Abstract

We are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (400°C) Si (100) surfaces and are using a broad beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. The best films to date show ∼85% sp3-bonded BN as determined from infrared (IR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction (SAD) confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 500 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 507
Copyright
Copyright © Materials Research Society 1993

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References

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