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Ion Implantation of Ti INTO LiNbO3: Fabrication of Waveguides and Simple Modulators

Published online by Cambridge University Press:  21 February 2011

C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057.
D. K. Thomas
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057.
P. R. Ashley
Affiliation:
U.S. Army Missile Command, Redstone Arsenal, AL 35898-5248
W. S. C. Chang
Affiliation:
University of California at San Diego, La Jolla, CA 92093
C. Buchal
Affiliation:
IFF-KFA, Jülich, FRG
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Abstract

Ion implantation has been used to introduce Ti at very high doses (>3 × 1017 /cm2) into the near-surface region of LiNbO3 to change the index of refraction.’ In the as-implanted state, the near surface is amorphous. Thermal annealing in water-saturated oxygen 1000°C crystallizes the amorphous region and incorporates the Ti into substitutional sites in the lattice at concentrations that exceed 10 at.%. Recrystallization takes place by solid-phase epitaxy. Both planar and channel waveguides have been fabricated with optical attenuations of <1 dB/cm. Both Mach-Zehnder and Bragg modulators have been fabricated using Ti implantation of LiNbO3. The characteristics of these devices have been determined and will be reported. The higher Ti concentrations which can be achieved by implantation allows tighter mode confinement and smaller mode profiles than with Ti-diffused guides.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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