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Ion Implantation Doping and High Temperature Annealing of GaN

Published online by Cambridge University Press:  21 February 2011

J. C. Zolper ,
M. Hagerott crawford ,
A. J. Howard ,
S. J. Pearton ,
C. R. Abernathy ,
C. B. Vartuli ,
C. Yuan ,
R. A. Stalls ,
J. Ramer  and
S. D. Hersee
...Show all authors
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
M. Hagerott crawford
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
A. J. Howard
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603 Emcore Corp., Somerset, NJ 08873
S. J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. Yuan
Affiliation:
Emcore Corp., Somerset, NJ 08873
R. A. Stalls
Affiliation:
Emcore Corp., Somerset, NJ 08873
J. Ramer
Affiliation:
University of New Mexico, Albuquerque, NM 87131
S. D. Hersee
Affiliation:
University of New Mexico, Albuquerque, NM 87131
R. G. Wilson
Affiliation:
Hughes Research Laboratory, Malibu CA 90265
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Abstract

The III-V nitride-containing semiconductors InN, GaN, and AIN and their ternary alloys are the focus of extensive research for application to visible light emitters and as the basis for high temperature electronics. Recent advances in ion implantation doping of GaN and studies of the effect of rapid thermal annealing up to 1100 °C are making new device structures possible. Both p- and n-type implantation doping of GaN has been achieved using Mg co-implanted with P for p-type and Si-implantation for n-type. Electrical activation was achieved by rapid thermal anneals in excess of 1000 °C. Atomic force microscopy studies of the surface of GaN after a series of anneals from 750 to 1100 °C shows that the surface morphology gets smoother following anneals in Ar or N2. The photoluminescence of the annealed samples also shows enhanced bandedge emission for both annealing ambients. For the deep level emission near 2.2 eV, the sample annealed in N2 shows slightly reduced emission while the sample annealed in Ar shows increased emission. These annealing results suggest a combination of defect interactions occur during the high temperature processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 801
Copyright
Copyright © Materials Research Society 1996

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References

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