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Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium

Published online by Cambridge University Press:  15 February 2011

W. R. Wampler  and
S. M. Myers
W. R. Wampler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, wrwampl@sandia.gov
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, wrwampl@sandia.gov
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Abstract

Ion channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.73
Copyright
Copyright © Materials Research Society 1999

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References

1. Pearton, S. J., in GaN and related materials, edited by Pearton, S. J. (Gordon and Breach, London, 1997) chapter 14.Google Scholar
2. Zavada, J. M., Wilson, R. G., Abernathy, C. R. and Pearton, S. J., Appl. Phys Lett. 64, 2724 (1994).Google Scholar
3. Miyachi, M., Tanaka, T., Kimura, Y., Ota, H., Appl. Phys. Lett. 72, 1101 (1998).Google Scholar
4. Pearton, S. J., Lee, J. W., and Yuan, C., Appl. Phys. Lett. 68, 2690 (1996).Google Scholar
5. Neugebauer, J., and Walle, C. G. Van de, Phys. Rev. Lett. 75, 4452 (1995).Google Scholar
6. Walle, C. G. Van de, Phys. Rev. B56, 10020 (1997).Google Scholar
7. Han, J., Ng, T. B., Biefeld, R. M., Crawford, M. H., and Follstaedt, D. M.. Appl. Phys Lett. 71, 3114 (1997).Google Scholar
8. Myers, S. M., Headley, T. J., Hills, C. R., Han, J., Petersen, G. A., Seager, C. H. and Wampler, W. R., MRS Internet J. Nitride Semicond. Res. 4S1, G5.8 (1999).Google Scholar
9. Liliental-Weber, Z., Kisielowski, C., Ruvimov, S., Chen, Y., Washburn, J., Grzegory, I, Bockowski, M., Jun, J. and Porowski, S., J. Electron. Mater. 25, 1545 (1996).Google Scholar
10. Feldman, L. C., Mayer, J. W. and Picraux, S. T., Materials Analysis by Ion Channeling, (Academic, New York, 1982), pp. 88–135.Google Scholar
11. Quéré, Y., Phys. Stat. Sol. 30, 713 (1968).Google Scholar
12. Bech-Nielsen, B., Phys. Rev. B37, 6353 (1988).Google Scholar
13. Doyle, P. A. and Turner, P. S., Acta Crystalogr. Sect.A 24, 390 (1968).Google Scholar
14. Yoshiasa, A., Koto, K., Maeda, H. and Ishii, T., Jpn. J. Appl. Phys. 36, 781 (1997).Google Scholar
15. Weinstein, M. G., Song, C. Y., Stavola, M., Pearton, S. J., Wilson, R. G., Shul, R. J., Killeen, K. P. and Ludowise, M. J., Appl. Phys Lett. 72, 1703 (1998).Google Scholar