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Ion Beam-Assisted Deposition of Biaxially Aligned CeO2 and ZrO2 Thin Films on Amorphous Substrates

Published online by Cambridge University Press:  22 February 2011

Kevin G. Ressler ,
Neville Sonnenberg  and
Michael J. Cima
Kevin G. Ressler
Affiliation:
Ceramics Processing Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139.
Neville Sonnenberg
Affiliation:
Ceramics Processing Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139.
Michael J. Cima
Affiliation:
Ceramics Processing Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139.
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Abstract

Deposition of HTSC and other films is often restricted to lattice-matched single crystal substrates to produce desired epitaxial films. Ion assisted, electron beam deposition (IBAD) has been used to evaporate biaxially aligned ceria and zirconia films on amorphous substrates, thus producing a surface for the deposition of oriented Ba2YCu3O7-δ films. The conditions at which preferential (200) film alignment is obtained has been optimized. The ion-to-atom ratio and ion beam energy are critical in determining beam effects on in-plane alignment Pole figures revealed that both (220) and (111) in-plane alignments parallel to the direction of the ion beam could be obtained depending on the ion-to-atom ratio. Certain orientations dominate at various temperature regimes on different substrates. The orientation regimes were similar on all substrates, but the temperature at which the trends were observed differed with substrate. Microstructures were correlated to orientations, with the desired (200) orientation being columnar. A mechanism to account for this biaxial alignment is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 953
Copyright
Copyright © Materials Research Society 1994

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References

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