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Ion Beam Self Annealing in Thin Silicon Films

Published online by Cambridge University Press:  25 February 2011

J. D. Rubio ,
R. P. Vijay ,
R. R. Hart  and
J. D. Pearce
J. D. Rubio
Affiliation:
Dept. of Nuclear Engineering, Texas A&M University, College Station, texas 77843
R. P. Vijay
Affiliation:
Dept. of Nuclear Engineering, Texas A&M University, College Station, texas 77843
R. R. Hart
Affiliation:
Dept. of Nuclear Engineering, Texas A&M University, College Station, texas 77843
J. D. Pearce
Affiliation:
E.I. duPont de Nemours and Company, Atomic Energy Division, Savannah Reiver Laboratory, Aiken, South Carolina 29801
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Abstract

Residual lattice disorder in lμm-thick silicon films as a function of the dose rate of 120 keV Ar+ ion implantations has been investigated. At a fluence of l×1 014 ions/cm2, low dose rates produced a highly damaged surface layer as expected; however, at a dose rate sufficient to locally heat the implanted film to a temperature of approximately 700°K, essentially complete annealing of the lattice disorder was observed. This temperature is significantly less than that normally required for post-implant thermal annealing. Measurements of lattice disorder were based on medium energy Rutherford backscattering and channeling analyses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 575
Copyright
Copyright © Materials Research Society 1989

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References

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