The activation kinetics of Si+ and Be+ ions implanted into InGaAsP (λ = 1.3 µm) grown by MOMBE were studied over a variety of doses (5 × 1012 - 5 × 1014 cm-2), annealing times (3-60 sec) and temperatures (575-750°C). Maximum doping concentrations of ~2 × 1019 cm-3 were obtained for both Si+ and Be+, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F+ or H+ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of ~8 × 106 Ω/□or ~106 Ω/□ for initially p+or n+ InGaAsP, respectively, were obtained for F+ implants followed by annealing near 450 °C. Smooth, anisotropic dry etching of the InGaAsP was obtained with low pressure CH4/H2/Ar discharges with the etch rates being independent of conductivity type or doping levels.