Hostname: page-component-7c8c6479df-24hb2 Total loading time: 0 Render date: 2024-03-28T21:38:04.322Z Has data issue: false hasContentIssue false

Ion Beam Modification of Ceramics*

Published online by Cambridge University Press:  25 February 2011

C. J. Mchargue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
G. C. Farlow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
J. M. Williams
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Get access

Abstract

Alterations to the structure and properties of ceramics are complex due to the range of bonding types encountered and the necessity for maintaining local charge balance. Ion damage can occur as a result of ionizing effects as well as displacement collisions. Ion species, implantation temperature, implantation energy, and the specific bonding characteristics of the host are important parameters in determining the structure and properties of implanted ceramics. Some of these effects will be illustrated for Al2O3 implanted with chromium or zirconium and silicon carbide implanted with chromium.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy, under contract W–7405–eng–26 with Union Carbide Corporation.

References

REFERENCES

1. Treatise on Materials Science and Technology, Vol. 18, Ion Implantation, Hirvonen, J. K., ed. (Academic Press, New York, NY 1980).Google Scholar
2. Metastable Materials by Ion Implantation, Picraux, S. T. and Choyke, W. J., eds. (North Holland, New York, NY 1982).Google Scholar
3. Townsend, P. D. and Valette, S., in: Treatise on Materials Science and Technology, Vol.18, Ion Implantation, Hirvonen, J. K., ed. (Academic Press, New York, NY 1980).Google Scholar
4. Arnold, G.W., Krefft, G. B., and Norris, C. B., Appl. Phys. Lett.25, 540–42 (1974).Google Scholar
5. Choyke, W. J., Patrick, L., and Dean, P. J., Phys. Rev. B 10, 2554–60 (1974).Google Scholar
6. Thompson, D. A., Chan, M. C., and Campbell, A. B., Can. J. Phys. 54, 626–32 (1976).Google Scholar
7. McHargue, C. J., Naramoto, H., Appleton, B. R., White, C. W., and Williams, J. M. in: Metastable Materials by Ion Implantation, Picraux, S. T. and Choyke, W. J., eds. (North Holland, New York, NY 1982), pp. 147–53.Google Scholar
8. van Groenou, A. B., Maan, N.,and Veldkamp, J.D.B., Philips Research Report 30, 320 (1975).Google Scholar
9. Naramoto, H., White, C. W., Williams, J. M., McHargue, C. J., Holland, O. W., Abraham, M. M., and Appleton, B. R., J. Appl. Phys. 54, 683–98 (1983).Google Scholar
10. Naramoto, H., McHargue, C. J., White, C. W., Williams, J.M., Holland, O. W., Abraham, M. M., and Appleton, B. R., Nucl. Instr. and Methods 202/210, 1159–66 (1983).Google Scholar
11. McHargue, C. J., Naramoto, H., White, C. W., Williams, J. M., Appleton, B. R., Sklad, P. S., and Angelini, P., in: Emergent Process Methods for High Technology Ceramics, Davis, R. F., Palmour III, H., and Porter, R. L., eds. (Plenum Press, New York, NY in press).Google Scholar
12. McHargue, C. J., Lewis, M. B. Appleton, B. R., Naramoto, H., White, C. W., and Williams, J. M. in: The Science of Hard Materials, Viswanadham, R. K., Rowcliffe, D. J., and Gurland, J., eds. (Plenum Press, New York, NY 1983) pp. 451–66.Google Scholar
13 McHargue, C. J. and Williams, J. M. in: Metastable Materials by Ion Implantation, Picraux, S. T. and Choyke, W.J., eds. (North Holland,New York, NY 1982), pp. 303–9.Google Scholar
14. Williams, J. M.,McHargue, C. J., andAppleton, B. R.,Nucl. Instr. and Methods 209/210, 317–23 (1983).Google Scholar
15. Burnett, P. J. and Page, T. F., Mater., J. Sci. (to be published).Google Scholar
16. Bradt, R. C. J. Am.Ceram Soc 50, 5455 (1967).Google Scholar
17. Ghate, . B. B.,Smith, W. C.,Kim, C. H.,Hasselman, D.P.H., andKane, G. E.,Ceram. Bull. 54, 210–21 (1975).Google Scholar
18. Roberts, .S. G.and Page, T. F. in: Ion Implantation into Metals,Ashworth, V.,Grant, W. A., and, R.P.M. Procter, eds. (Pergamon Press, New York, NY 1982), pp. 135–46.Google Scholar
19. Wright, . R. B.,Varma, R.,and Gruen, D. M., J Nucl. Mater. 63, 415–215 (1976).Google Scholar
20. Begun, . G. and McHargue, C. J., unpublished work at Oak Ridge National Laboratory.Google Scholar