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Ion Beam Deposition of Materials At 40–200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation*

Published online by Cambridge University Press:  26 February 2011

N. Herbots
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831
B.R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831
T.S. Noggle
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831
R.A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831
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Abstract

Ion beam deposition (IBD), the process whereby magnetically analyzed ions are directly deposited on single crystal substrates, has been studied for 74Ge and 30Si ions on Si(100) and Ge(100). The effects of sputtercleaning prior to deposition and substrate temperature during deposition were investigated. Three analytical techniques were systematically used to obtain information on the deposited films: (1) Rutherford backscattering combined with ion channeling, (2) cross-section TEM, and (3) Seeman-Bohlin X-ray diffraction. In the energy range explored (40–200 eV), the width of the interface between the IBD film and the substrate was found to be always less than 1 nm. Each IBD layer was highly uniform in thickness and composition for deposition temperatures from 300 K to 900 K. Without prior sputter-cleaning and annealing of the Si(100) and Ge(100) substrates, no epitaxy was observed. UHV conditions were found to be a requirement in order to grow crystalline Si films presenting bulk-like density. This was not the case for Ge films which showed bulk-like density for IBD at higher pressures. Results on the first Si/Ge superstructure grown by IBD are also shown.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under DE-AC05-84R21400 with Martin Marietta Energy Systems, Inc.

References

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