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Ion beam assisted deposition of Cu(In,Ga)Se2 films for thin film solar cells

Published online by Cambridge University Press:  21 March 2011

Gerd Lippold ,
Horst Neumann  and
Axel Schindler
Gerd Lippold
Affiliation:
Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany, lippold@rz.uni-leipzig.de
Horst Neumann
Affiliation:
Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany
Axel Schindler
Affiliation:
Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany
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Abstract

We report on a novel ion beam selenization process. The reactive chalcogen component Se and a significant part of the thermal energy needed for CIGS formation is delivered directly into the growing surface by a low energy Se ion beam from a broad beam ion source. This highly controllable technique with respect to ion energy, dose and uniformity and with scale- up capabilities can be used in two ways either for selenization of metallic Cu/(In,Ga) thin film stacks or in co-deposition. In the case of co-deposition the CIGS growth temperature can be reduced to < 400°C

Besides the description of the method we present results of Se ion beam analysis and properties of CIGS thin films, produced by the novel selenization process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H3.9
Copyright
Copyright © Materials Research Society 2001

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References

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