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Investigation of Ultralow Loss Interconnection Technique for LTCC based System-in-Package(SIP) Technology at 60GHz

Published online by Cambridge University Press:  26 February 2011

Dong-Young Kim
Affiliation:
kimdyey@etri.re.kr, ETRI, Microwave Device Team, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea, Republic of
Jae Kyoung Mun
Affiliation:
jkmun@etri.re.kr, ETRI, Microwave Device Team, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea, Republic of
Dong-Suk Jun
Affiliation:
dsjun@etri.re.kr, ETRI, Microwave Device Team, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea, Republic of
Haechoen Kim
Affiliation:
khc@etri.re.kr, ETRI, Microwave Device Team, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea, Republic of
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Abstract

The effects of wire and ribbon bond interconnection on the transmission characteristics at millimeter wave frequency range was presented. The insertion loss and return loss was closely related with the ratio of the signal line width to that of bonded wire or ribbon. The most promise condition for low loss interconnection was that the width of bonded wire or ribbon should be compatible to the width of signal lines. In the actual fabrication of LTCC amp module, the insertion loss of packaging is very small which means that the loss due to bonding is nearly negligible. However, the S11 and S22 degraded severely due to the difference of the types of transmission lines between chip and packaging module. A new transition structure was introduced in order to compensate this difference of transmission lines.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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