Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-07-04T16:01:59.158Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of the Dopant Distribution in thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  10 February 2011

Ilya Karpov ,
Catherine Hartford ,
Greg Moran ,
Subramania Krishnakumar ,
Ron Choma  and
Jack Linn
Ilya Karpov
Affiliation:
Mitsubishi Silicon America, Salem, OR
Catherine Hartford
Affiliation:
Solid State Measurements, Inc., Pittsburgh, PA
Greg Moran
Affiliation:
Mitsubishi Silicon America, Salem, OR
Subramania Krishnakumar
Affiliation:
Mitsubishi Silicon America, Salem, OR
Ron Choma
Affiliation:
Harris Semiconductor Sector, Palm Bay, FL
Jack Linn
Affiliation:
Harris Semiconductor Sector, Palm Bay, FL
Get access

Abstract

In this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-oriented substrates. We performed doping profile studies by means of local resistivity measurements using a spreading resistance probe (SRP). Chemical profiles of the dopants were also obtained using secondary ion mass spectrometry (SIMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 75
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schroder, D. K., Semiconductor Material and Device Characterization, (John Wiley & Sons, 1990).Google Scholar
2. Liaw, H. M. and Rose, J. W., in Epitaxial Silicon Technology, edited by Baliga, B. J. (Academic Press, 1986).Google Scholar
3. Bullis, W.M., Seiler, D.G., Diebold, A.C., Eds., Semiconductor Characterization. Present Status and Future Needs, (American Institute of Physics, 1996).Google Scholar
4. Benninghoven, A. et al, Secondary Ion Mass Spectrometrv STMS VII (John Wiley & Sons, 1990).Google Scholar
5. Casel, A. and Jorke, H., Appl. Phys. Lett. 50, 989 (1987).Google Scholar
6. Choo, S., Leong, M. S., Sim, J. H., Solid State Electron. 26, 723 (1983).Google Scholar
7. ASTM F723–88, Standard Practice for Conversion between Resistivity and Dopant Density for Boron-Doped and Phosphorous-Doped Silicon. ASTM Annual Standards, v10.05 (1996).Google Scholar
8. Hu, S.M., J. Appl. Phys. 53, 1499 (1982).Google Scholar
9. Albers, J., in Emerging Semiconductor Technology, ASTM STP 960, edited by Gupta, D. and Langer, P. H. (ASTM, 1986), p. 480.Google Scholar
10. Grove, A. S., Roder, A., and Sah, C. T., J. Appl. Phys. 36, 802 (1965).Google Scholar
11. Fair, R. B. in Semiconductor Materials and Process Technology Handbook, edited by McGuire, G. E. (Noyes Publications, 1988), p. 455.Google Scholar
12. Clayton, S. et al, Electron. Lett., 24, 881, 1988.Google Scholar
13. Sze, S. M.. Phisics of Semiconductor Devices (John Wiley & Sons, 1981), p. 78.Google Scholar
14. Mazur, R.G., J. Vac. Sci. Technol. B10, 397 (1992).Google Scholar