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Investigation of Shunt Resistances in Single-Junction a-Si:H Alloy Solar Cells*

Published online by Cambridge University Press:  16 February 2011

Kenneth R. Lord II ,
Michael R. Walters  and
James R. Woodyard
Kenneth R. Lord II
Affiliation:
Institute for Manufacturing Research and Department of Electrical … Computer Engineering, Wayne State University, Detroit, MI.
Michael R. Walters
Affiliation:
Institute for Manufacturing Research and Department of Electrical … Computer Engineering, Wayne State University, Detroit, MI.
James R. Woodyard
Affiliation:
Institute for Manufacturing Research and Department of Electrical … Computer Engineering, Wayne State University, Detroit, MI.
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Abstract

Dark current-voltage characteristics of one hundred twenty single-junction a-Si:H alloy solar cells were studied. Parametric Modelling of dark I-V Measurements was used to determine some of the cell parameters. Average shunt resistances were 31 to 1200 kΩ for intrinsic layer thicknesses of 200 to 800 nm, respectively. Current switching was observed during dark I-V Measurements; the current in the reverse-bias region varies approximately as the square of the voltage following the onset of switching. The I-V characteristics in the switched mode are not understood. Voltage history and scan rate play a role in dark I-V characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 729
Copyright
Copyright © Materials Research Society 1994

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Footnotes

*

This work was supported in part by NASA and the Spacecraft Technology Division of TRW, Redondo Beach, CA.

References

REFERENCES

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