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Investigation of New Geometries for High Duty Cycle Far-Infrared p-Type Germanium Lasers

Published online by Cambridge University Press:  10 February 2011

Danielle R. Chamberlin ,
Erik Bruendermannw  and
Eugene E. Haller
Danielle R. Chamberlin
Affiliation:
Lawrence Berkeley National Laboratory and UC Berkeley, Berkeley, California 94720
Erik Bruendermannw
Affiliation:
Lawrence Berkeley National Laboratory and UC Berkeley, Berkeley, California 94720
Eugene E. Haller
Affiliation:
Lawrence Berkeley National Laboratory and UC Berkeley, Berkeley, California 94720
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Abstract

We report on increasing the pulse length and repetition rate of p-type germanium lasers through miniaturization, increased electric field uniformity, and improved cooling. We have recently demonstrated that it is possible to improve the electric field uniformity necessary for an efficient laser and at the same time decrease the electrical input power by using a geometry with d/L>>1, where d is the distance between electrical contacts and L is the length in the direction of the Hall field. In order to achieve good heat sinking along with a large d/L ratio, we have developed a new, planar contact geometry. Attaching an undoped, high-resistivity, single-crystal Si heat sink to the base of the Ge planar contact laser increases the duty cycle by a factor of 5.5. In order to further decrease the input power by decreasing the volume of laser crystals in the planar contact geometry, we show as a proof-of-concept the use of polished strontium titanate single crystals as electrically insulating far-infrared mirrors based on restrahl band reflection. The physical phenomena underlying these improvements in this novel geometry will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 285
Copyright
Copyright © Materials Research Society 2000

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References

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