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Investigation of Misfit Dislocation Configurations in Mbe-Grown InGaAs Layers on Misaligned GaAs (001) Substrates

Published online by Cambridge University Press:  28 February 2011

P. Werner ,
N. D. Zakharov ,
Y. Chen ,
Z. Liliental-Weber ,
J. Washburn ,
J. F. Klem  and
J. Y. Tsao
P. Werner
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
N. D. Zakharov
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
Y. Chen
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
J. Washburn
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
J. F. Klem
Affiliation:
Sandia National Laboratories, Albuquerque, NM
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM
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Abstract

The configurations of misfit dislocations in In0.2Ga0.8As/GaAs(001) hetero structures grown on slightly misoriented substrates was investigated by transmission electron microscopy (TEM). Layers 6 nm, 20 nm and 40 nm thick were grown by MBE. The substrate was tilted in [110], [110], [120], [210] and [010] directions at angles between 0° and 10°. Only in the 40 nm thick layers networks of 60° and 90° dislocations were formed. Misfit dislocations were found at the interface in <110> directions. In the substrate tilting range between 0° and 4° the changes in dislocation density can be explained by the different

character of α and β dislocations. For a substrate tilting above 6° the different dislocation sets show an increased anisotropy. The misfit dislocations at the interface were decorated by In atoms. The influence of three-dimensional crystal growth on increasing surface roughness is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 811
Copyright
Copyright © Materials Research Society 1993

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References

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