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Investigation of Amorphous-Crystalline Silicon Interface Via Capacitance Techniques

Published online by Cambridge University Press:  26 February 2011

J. M. Essick  and
J. D. Cohen
J. M. Essick
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
J. D. Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
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Abstract

Amorphous-crystalline heterostructures composed of sub-micron thick undoped amorphous hydrogenated silicon deposited on lightly doped n-type crystalline silicon substrates have been studied by capacitance techniques. Capacitance vs. temperature scans along with model calculations on these samples are used to investigate the amorphous-crystalline silicon interface region. We deduce the existence of an anomalously defective a-Si:H region extending roughly 1000 Angstroms from the growth interface. We also deduce considerable fluctuations in the interface potential which indicate lateral variations of ±20% in the defect distritribution over a 1000 Angstrom scale.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 549
Copyright
Copyright © Materials Research Society 1988

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References

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