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Inverse-Computation Design of a SiC Bulk Crystal Growth System

Published online by Cambridge University Press:  21 March 2011

Alexey V. Kulik
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia.
Svetlana E. Demina
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia.
Sergey K. Kochuguev
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia.
Dmitry Kh. Ofengeim
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia.
Sergey Yu. Karpov
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia.
Andrey N. Vorob'ev
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia.
Maxim V. Bogdanov
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia.
Mark S. Ramm
Affiliation:
A.F.Ioffe Physical-Technical Institute, Russian Academy of Sciences, St.Petersburg, Russia.
Alexander I. Zhmakin
Affiliation:
A.F.Ioffe Physical-Technical Institute, Russian Academy of Sciences, St.Petersburg, Russia.
Anna A. Alonso
Affiliation:
High Frequency Current Institute, St.Petersburg, Russia.
Sergey G. Gurevich
Affiliation:
High Frequency Current Institute, St.Petersburg, Russia.
Yuri N. Makarov
Affiliation:
Semiconductor Technology Research Corporation, Richmond, VA, U.S.A.
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Abstract

Inverse modeling was applied to the optimization of a crucible design for SiC sublimation growth. We found a crucible shape providing the optimal temperature distribution in terms of the powder source stability during long-term operation and of the convex crystal shape. Considerable improvement of temperature uniformity throughout the powder charge was achieved. The results obtained show selective sensitivity of the thermal field inside the crucible to modification of the crucible design. The inverse problem approach is easy-to-adapt to various optimization criteria and seems to be especially effective in the case of multi-factor optimization.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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