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The Intuitive Thermalisation Model Compared to Explicit Multiple Trapping Calculations

Published online by Cambridge University Press:  10 February 2011

H. Feist ,
S. v. Aichberger  and
M. Kunst
H. Feist
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
S. v. Aichberger
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
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Abstract

A simple model (the HTMT model) describing the interaction of excess mobile charge carriers with an exponential bandtail is presented. The new model differs from the commonly used intuitive thermalization (TROK) model only by the definition of the demarcation energy. By comparison of the results of the TROK and the HTMT model with numerical calculation of the interaction it is shown that the HTMT model yields an adequate description, whereas the TROK model does not reproduce the absolute values and also has a deviating time dependence at higher temperatures. The origin of these differences is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 775
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Tiedje, T. and Rose, A., Solid State Comm. 37,49 (1980).Google Scholar
2 Orenstein, J. and Kastner, M., Phys. Rev. Lett. 46, 1421 (1981).Google Scholar
3 Orenstein, J., Kastner, M.A. and Vaninov, V., Phil.Mag. B46, 23 (1982).Google Scholar
4 Tiedje, T. in Semiconductors and Semimetals, Vol.21C, ed.by J.I.Pankove (Academic Press, London, 1984) 207.Google Scholar
5 Feist, H. and Kunst, M., to be published.Google Scholar
6 Aljishi, S., Cohen, J.D., Jin, S. and Ley, L., Mat. Res. Soc. Symp. Proc. 192, 157 (1990).Google Scholar
7 Baranovskii, S.D., Thomas, P. and Adriaenssens, G.J., J.of Non-Cryst.Solids 190, 283 (1995).Google Scholar