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Intra-Cascade Surface Recombination of Point Defects During Ion Bombardment of Ge (001)

Published online by Cambridge University Press:  22 February 2011

J. A. Floro ,
B. K. Kellerman ,
E. Chason ,
S. T. Picraux ,
D. K. Brice  and
K. M. Horn
J. A. Floro
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
B. K. Kellerman
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
D. K. Brice
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
K. M. Horn
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
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Abstract

Low energy Ar and Xe ion bombardment of Ge (001) produces large numbers of point defects on the Ge surface and in the near-surface regions. Defect concentrations on the surface are detected and quantified in real time during bombardment using in situ Reflection High Energy Electron Diffraction (RHEED). We report the energy dependence of the defect yield for 70–500 eV Ar and Xe ion bombardment, and the temperature dependence of the defect yield (defects/ion) during 200 eV ion bombardment. The defect yield drops rapidly as the substrate temperature during bombardment is varied from 175 K to 400 K. We attribute the yield reduction to surface recombination of adatoms and vacancies produced in the same collision cascade.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 993
Copyright
Copyright © Materials Research Society 1994

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References

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