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Intersubband Absorptions in Doped and Undoped GaN/AlN Quantum Wells at Telecommunication Wavelengths Grown on Sapphire and 6H-SiC Substrates

Published online by Cambridge University Press:  01 February 2011

A. Helman ,
M. Tchernycheva ,
A. Lusson ,
E. Warde ,
F. H. Julien ,
E. Monroy ,
F. Fossard ,
Le Si Dang  and
B. Daudin
A. Helman
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Bât.220, Université Paris-Sud, 91405 Orsay, France
M. Tchernycheva
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Bât.220, Université Paris-Sud, 91405 Orsay, France
A. Lusson
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Bât.220, Université Paris-Sud, 91405 Orsay, France
E. Warde
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Bât.220, Université Paris-Sud, 91405 Orsay, France
F. H. Julien
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Bât.220, Université Paris-Sud, 91405 Orsay, France
E. Monroy
Affiliation:
CEA/CNRS Research Group “Nanophysique et semiconducteurs”, DRFMC/SPMM, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
F. Fossard
Affiliation:
CEA/CNRS Research Group “Nanophysique et semiconducteurs”, DRFMC/SPMM, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
Le Si Dang
Affiliation:
CEA/CNRS Research Group “Nanophysique et semiconducteurs”, DRFMC/SPMM, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
B. Daudin
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Bât.220, Université Paris-Sud, 91405 Orsay, France
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Abstract

In this paper we present experimental and theoretical study of intersubband transitions at telecommunication wavelengths in GaN/AlN hexagonal-phase quantum wells grown by molecular beam epitaxy on sapphire substrates. Crossed structural and photoluminescence experiments show that strong in-plane carrier localization occurs due to thickness fluctuations at GaN/AlN interfaces. Fourier transform infrared spectroscopy and photo-induced absorption spectroscopy performed on doped and undoped samples reveal a systematic blue-shift of the e1-e2 transitions with doping due to many body interactions. A good agreement is achieved between experiments and self-consistent Schrödinger-Poisson calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y4.5
Copyright
Copyright © Materials Research Society 2004

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References

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