Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-06-17T09:30:15.767Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Strain-Field in Thin-Film Microstructures

Published online by Cambridge University Press:  10 February 2011

Qun Shen  and
Stefan Kycia
Qun Shen
Affiliation:
Cornell High Energy Synchrotron Source (CHESS), Wilson Laboratory, Cornell University, Ithaca, New York 14853
Stefan Kycia
Affiliation:
Cornell High Energy Synchrotron Source (CHESS), Wilson Laboratory, Cornell University, Ithaca, New York 14853
Get access

Abstract

We present x-ray diffraction analysis of interfacial strain fields in crystalline semiconductor microstructures. In particular we report the observations of diffuse interference fringes, asymmetric grating diffraction patterns, and asymmetric crystal-truncation-rod profiles due to the straw-varying regions in a microstructure. From these diffraction features, both the longitudinal and the transverse strain gradients are determined, in addition to the average stram. These experimental results can be used to interpret other physical properties in microstructures such as band-gap energies and surface morphologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 492: Symposium S – Microscopic Simulation of Interfacial Phenomena in Solids… , 1997 , 389
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pollak, F.H., MRS Symposium Proceedings 405, 3 (1996).Google Scholar
2. Tentarelli, E.S., Reed, J.D., Chen, Y.-P., Schaff, W.J., and Eastman, L.F., J. Appl. Phys. 78, 4031 (1995).Google Scholar
3. Notomi, M., Hammersberg, J., Weman, H., Nojima, S., Sugiura, H., Okamoto, M., Tamamura, T., and Potemski, M., Phys. Rev. B 52, 11147 (1995).Google Scholar
4. Gmndamann, M., Stier, O., and Bimberg, D., Phys. Rev. B 52, 11969 (1995).Google Scholar
5. Shen, Qun, Kycia, S.W., Tentarelli, E., Schaff, W., and Eastman, L.F., Phys. Rev. B 54, 16381 (1996).Google Scholar
6. Tersoff, J., Teichert, C., and Lagally, M.G., Phys. Rev. Lett. 76, 1675 (1996).Google Scholar
7. Several review articles can be found in Mat. Res. Soc. Bulletin, Vol. 21, guest editor: Schowalter, L.J., pp. 18–54, April 1996.Google Scholar
8. Tapfer, L. and Grambow, P., Appl. Phys. A 50, 3 (1990).Google Scholar
9. Macrander, A.T. and Slusky, S.E.G., Appl. Phys. Lett. 6, 443 (1990).Google Scholar
10. Tolan, M., Konig, G., Brugemann, L., Press, W., Brinkop, F., and Kotthaus, J.P., Europhys. Lett. 20, 223 (1992).Google Scholar
11. Tapfer, L., La Rocca, G.C., Lage, H., Brandt, O., Heitmann, D., and Ploog, K., Appl. Surf. Sci. 60, 517 (1992).Google Scholar
12. Shen, Qun, Umbach, C.C., Weselak, B., and Blakely, J.M., Phys. Rev. B 48, 17967 (1993); Phys. Rev. B 53, R4237 (1996).Google Scholar
13. Holy, V., Darhuber, A.A., Bauer, G., Wang, P.D., Song, Y.P., Sotomayor-Torres, C.M., and Holland, M.C., Phys. Rev. B 52, 8348 (1995).Google Scholar
14. Shen, Qun, MRS Symposium Proceedings 405, 121 (1996).Google Scholar
15. Steinfort, A.J., Scholte, P.M.L.O., Ettema, A., Tuinstra, F., Nielsen, M., Landemark, E., Smilgies, D.-M., Feidenhans'l, R., Falkenberg, G., Seehofer, L., and Johnson, R.L., Phys. Rev. Lett. 77, 2009 (1996).Google Scholar
16. Shen, Q. and Kycia, S., Phys. Rev. B 55, 15791 (1997).Google Scholar
17. De Caro, L. and Tapfer, L., Phys. Rev. B 51, 4381 (1995).Google Scholar
18. Mirin, R.P., Ph.D. Thesis, University of California at Santa Barbara (1996).Google Scholar