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Interfacial Stability and Misfit Dislocation Formation in InAs/Gaas(110) Heteroepitaxy

Published online by Cambridge University Press:  10 February 2011

Luis A. Zepeda-Ruiz ,
Dimitrios Maroudas  and
W. Henry Weinberg
Luis A. Zepeda-Ruiz
Affiliation:
Department of Chemical Engineering, University of California, Santa Barbara, CA 93106-5080
Dimitrios Maroudas*
Affiliation:
Department of Chemical Engineering, University of California, Santa Barbara, CA 93106-5080
W. Henry Weinberg
Affiliation:
Department of Chemical Engineering, University of California, Santa Barbara, CA 93106-5080
*
dimitris@calypso.chemengr.ucsb.edu
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Abstract

A comprehensive atomic-scale study is presented of the mechanical behavior of the InAs epitaxial film, the interfacial stability with respect to misfit dislocation formation, and the film surface morphology in InAs/GaAs(110) heteroepitaxy. If a GaAs buffer layer of ten-monolayer thickness is used in the epitaxial growth, a transition is predicted from a coherent to a semi- coherent interface consisting of a regular array of edge interfacial misfit dislocations at a critical film thickness of six monolayers. A second transition to a semicoherent interface consisting of a completely developed network of perpendicularly intersecting misfit dislocations is predicted at thicknesses greater than 150 monolayers. Our simulation results are in excellent agreement with recent experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 191
Copyright
Copyright © Materials Research Society 1998

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References

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