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Interfacial Reactions between In/Pd and GaAs

Published online by Cambridge University Press:  26 July 2012

Z. Ma ,
L. H. Allen ,
B. Blanpain ,
Q. Z. Hong ,
J. W. Mayer  and
C. J. Palmstrom
Z. Ma
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
L. H. Allen
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
B. Blanpain
Affiliation:
MTM Dept., Kuleuven, Belgium
Q. Z. Hong
Affiliation:
Dept..of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Dept..of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. J. Palmstrom
Affiliation:
Bellcore, Red Bank, NJ 07701
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Abstract

Interfacial microstructure of In/Pd ohmic contacts to n-GaAs was studied by various X-ray diffraction techniques and secondary ion mass spectroscopy (SIMS). Analysis of this interface after various annealing showed that In1-xGaxAs compounds are formed at the interface and the composition of these compounds depends upon the annealing temperature. As the temperature increases, the stoichiometry of the Inrich compounds tends toward higher concentrations of Ga. The low contact resistance is achieved by dividing the Schottky barrier between metal and GaAs into two barriers due to metal/Inl-xGaxAs and In1-xGaxAs/GaAs. The barrier due to In1-xGaxAs/GaAs is believed to be the main limiting factor in lowering of contact resistance. The observed ohmic behavior for sample annealed at 500°C for 20 s is attributed to the further reduction of this barrier.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 131
Copyright
Copyright © Materials Research Society 1992

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References

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