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Interfacial Reactions Between Co and GaAs

Published online by Cambridge University Press:  21 February 2011

F.-Y. Shiau ,
Y. Zuo ,
X.-Y. Zheng ,
J.-C. Lin  and
Y. A. Chang
F.-Y. Shiau
Affiliation:
University of Wisconsin-MadisonDepartment of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
Y. Zuo
Affiliation:
University of Wisconsin-MadisonDepartment of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
X.-Y. Zheng
Affiliation:
University of Wisconsin-MadisonDepartment of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
J.-C. Lin
Affiliation:
University of Wisconsin-MadisonDepartment of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
Y. A. Chang
Affiliation:
University of Wisconsin-MadisonDepartment of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
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Abstract

Interfacial reactions between Co and GaAs have been studied using bulk diffusion couples of Co (∼0.5 mm thick)/GaAs and thin-film Co(∼-40 nm) on (001)GaAs as well as the epitaxial formation of CoAs and CoGa on (001)GaAs. In addition, phase diagram of Co-Ga-As at 600°C was determined. The thin-film results are rationalized in terms of the phase diagram and bulk diffusion data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 119: Symposium F – Adhesions in Solids , 1988 , 171
Copyright
Copyright © Materials Research Society 1988

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References

1. Lin, J.-C, Schulz, K. J., Hsieh, K.-C., and Chang, Y. A., J. Mater. Res. 3,148(1988).CrossRefGoogle Scholar
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5. Lin, J. -C., Zheng, X. -Y. and Chang, Y. A., in Epitaxy of Semiconductor Layered Structures (Eds.:Tang, R. J., Dawson, L. R. and Gunshor, R. L.),Mats. Res. Soc., Inc.,Pitts.,PA(1988).Google Scholar