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Interface Roughness and X-Ray Reflectivity of Amorphous Semiconductor Multilayers

Published online by Cambridge University Press:  25 February 2011

P. D. Persans ,
A. F. Ruppert ,
V. Pantojas ,
K. Liang ,
G. Hughes  and
B. Abeles
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY
A. F. Ruppert
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
V. Pantojas
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY
K. Liang
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
G. Hughes
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
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Abstract

We report high-resolution small-angle x-ray reflectivity measurements on plasma-deposited a-Ge:H/a-Si:H periodic amorphous multilayers. We show that reflectivity spectra are quite complex, involving components due to relatively smooth and rough layer interfaces at different depths in the sample respectively. Model computations show that interface roughness increases from 3 É at the substrate-sample interface to more than 15 É at the top surface of a 0.5 μm multilayer stack.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 225
Copyright
Copyright © Materials Research Society 1990

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References

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