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Interface Diffusion in Polysynthetically-Twinned Tiai

Published online by Cambridge University Press:  10 February 2011

D. E. Luzzi ,
D. Imamura ,
H. Inui ,
E. P. George ,
L. Heatherly ,
H. Yasuda ,
H. Mori  and
M. Yamaguchi
D. E. Luzzi
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104-6272, USAluzzi@lrsm.upenn.edu
D. Imamura
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Kyoto 606-01, Japan
H. Inui
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Kyoto 606-01, Japan
E. P. George
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6093, USA
L. Heatherly
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6093, USA
H. Yasuda
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Osaka 565, Japan.
H. Mori
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Osaka 565, Japan.
M. Yamaguchi
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Kyoto 606-01, Japan
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Abstract

The utility of polysynthetically-twinned (PST) TiAI, which contains a high density of parallel, atomically-flat interfaces within a set of identical crystallographic orientations, as a potential model system for a detailed investigation of interface diffusion is explored. Macroscopic PST crystals were grown in an optical float zone furnace. Thin films were cut from oriented crystals and polished with <112> directions normal to the film. After sputter cleaning, Ag was deposited on one side of the TiAI thin films. Auger spectra were obtained from these films over a wide range of sputter/anneal conditions. The Al and Ti concentrations were analyzed as well as the important impurity elements, S, Ar, C, N and O. Using the present data and existing knowledge of the microstructure and crystallography of PST TiAI, the potential of this material for providing a detailed understanding of the atomistic mechanisms of interface diffusion is analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 527
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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