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Interface and Bulk Oxide Damage Induced by Boron Implantation

Published online by Cambridge University Press:  25 February 2011

H. Wong  and
N.W. Cheung
H. Wong
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley CA 94720
N.W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley CA 94720
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Abstract

Investigations were carried out on the damage of SiO2 and the Si-SiO2 interface induced by boron implantation through polysilicon/SiO2 /p-Si structures with doses up to 1014cm−2 and annealed at 950°C. Using the constant voltage stressing technique, both capacitance-voltage and thin-oxide tunneling current measurements showed that both electron trapping and hole trapping are increased, and that ion-induced electron trapping overcompetes hole trapping for boron doses higher than 5×1013cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 53
Copyright
Copyright © Materials Research Society 1985

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References

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