Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-26T07:14:25.378Z Has data issue: false hasContentIssue false
  • English
  • Français

Interdiffusion Behavior of Si/Si1−x Gex. Layers in Inert and Oxidizing Ambients

Published online by Cambridge University Press:  10 February 2011

Michelle Griglione ,
Tim Anderson ,
Yaser Haddara ,
Mark Law  and
Kevin Jones
Michelle Griglione
Affiliation:
Department of Chemical Engineering, University of Florida
Tim Anderson
Affiliation:
Department of Chemical Engineering, University of Florida
Yaser Haddara
Affiliation:
Department of Electrical and Computer Engineering, University of Florida
Mark Law
Affiliation:
Department of Electrical and Computer Engineering, University of Florida
Kevin Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida
Get access

Abstract

Interdiffusion of Si/Si0.85Ge0.15 heterojunctions subjected to annealing in inert and oxidizing ambients was investigated as a function of temperature (900 to 1200 °C) and time, allowing comparison between intrinsic diffusion and diffusion under interstitial injection. The Ge diffusivity was extracted using the process simulation program FLOOPS. A time-independent diffusivity was observed for all temperatures. The calculated Ge diffusivity in oxidizing ambient was comparable to that in inert ambient indicating that the interstitial concentration plays a minimal role in interdiffusion. A fractional interstitial component, f1, equal to 0.10 is estimated for annealing temperatures in the range 900 to 1100 °C, while f1 increases to approximately 0.17 at 1200 °C. This may indicate a change in diffusion mechanism at a temperature greater than 1100 °C

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 119
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Law, M.E., FLOOPS User's Manual, (University of Florida, Gainesville, FL, August 1996).Google Scholar
2. Fahey, P.M., Griffin, P.B., J.D Plummer, Rev. Mod. Phys. 61, 289 (1989).Google Scholar
3. Newey, J.P., Robbins, D.J., Wallis, D., Proc. of the 1 1th Int. Conf. on Secondary Ion Mass Spectrometry, edited by Lareau, R., Gillen, G. and Stevie, F. (J. Wiley & Sons, 1998), p. 979.Google Scholar
4. Kruger, D., Ilfgen, K., Heinemann, B., Krups, R., Benninghoven, A., 4th Int. Workshop on Measurement, Characterization and Modeling of Ultra-shallow Doping Profiles in Semiconductors, April 1997, p. 9.1.Google Scholar
5. Sunamura, H., Fukatsu, S., Usami, N., Shiraki, Y., Jpn. J. Appl. Phys. 33, 2344 (1994).Google Scholar
6. Zaumseil, P., Jaghold, U., Kruger, D., J. Appl. Phys. 76, 2191 (1994).Google Scholar
7. Hollander, B., Mantl, S., Stritzker, B., Jorke, H., Kasper, E., J. Mater. Res. 4, 163 (1989).Google Scholar
8. Van Ijzendoorn, L.J., Van De Walle, G.F.A., Van Gorkum, A.A, Theunissen, A.M.L, Van de Heuvel, R.A, Barrett, J.H., Nucl. Instr. and Meth. in Phys. Res. B 50, 127 (1990).Google Scholar
9. Fahey, P., Iyer, S.S., Scilla, G.J., Appl. Phys. Lett 54, 843 (1989).Google Scholar
10. Cowern, N.E.B., Proc. 4th Int. Symp. on Process Physics and Modeling in Semiconductor Technology, edited by Srinivasan, G.R., Murthy, C. C. and Dunham, S.T., Proc. Vol. 96-4 (Electrochem. Soc., Pennington, NJ 1996), p. 195.Google Scholar