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Interdiffusion and Reaction of Pd on Atomically Stepped 6H-SiC Surfaces: Progress Toward Thermally Stable High Temperature Gas Sensors

Published online by Cambridge University Press:  01 February 2011

C. D. Stinespring ,
C. Y. Peng ,
A. A. Woodworth ,
K. Meehan ,
M. J. Murdoch-Kitt  and
C. L. Anderson
C. D. Stinespring
Affiliation:
Department of Chemical Engineering, West Virginia University, Morgantown, WV 26506–6102
C. Y. Peng
Affiliation:
Department of Chemical Engineering, West Virginia University, Morgantown, WV 26506–6102
A. A. Woodworth
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506–6315
K. Meehan
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24060
M. J. Murdoch-Kitt
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24060
C. L. Anderson
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24060
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Abstract

High temperature Pd-SiC Schottky diode gas sensors are known to thermally degrade due to interdiffusion and reaction at the metal-semiconductor interface. To understand and possibly eliminate this problem, detailed surface studies of thermally induced Pd-SiC surface interactions have been performed. These experiments compare standard 6H-SiC (0001) surfaces typical of those used in device fabrication with periodically stepped surfaces prepared by high temperature hydrogen etching. The Pd films range in thickness from the monolayer level (∼0.4 nm) to actual device dimensions (∼46.5 nm) and are deposited under ultrahigh vacuum conditions at ∼50 °C. These films are characterized in-situ using Auger electron spectroscopy both before and after annealing at 670 °C. The Auger lineshapes provide quantitative information on the chemistry of the reaction products. Ex-situ atomic force microscopy is used to characterize changes in surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A7.10
Copyright
Copyright © Materials Research Society 2005

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References

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