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Interconnect-Related Degradation of PZT Capacitor for FeRAM

Published online by Cambridge University Press:  10 February 2011

S. Kobayashi ,
K. Amanuma  and
H. Hada
S. Kobayashi
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, Sagamihara, Kanagawa 229-1198, Japan, kobayashi@mel.cl.nec.co.jp
K. Amanuma
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, Sagamihara, Kanagawa 229-1198, Japan
H. Hada
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, Sagamihara, Kanagawa 229-1198, Japan
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Abstract

Ferroelectric properties of a Pb(Zr,Ti)O3 (PZT) thin film capacitor with a conventional Al/TiN/Ti interconnect are seriously degraded by annealing at around 400°C. The degradation of the PZT capacitor is reduced as the interconnects are narrowed while the total area of the interconnects on the capacitor is fixed. This result cannot be understood by supposing that Ti diffusion into PZT degrades the ferroelectric properties. A possible cause for the degradation is stress placed on the PZT film during the 400°C annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 83
Copyright
Copyright © Materials Research Society 1999

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