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Interactions Between Hydrogen and Silicon Acceptors in p-Type GaAs:Si

Published online by Cambridge University Press:  26 February 2011

J. Chevallier ,
B. Pajot ,
A. Jalil ,
R. Mostefaoui ,
R. Rahbi  and
M. C. Bolssy
J. Chevallier
Affiliation:
Laboratoire de Physique des Solides, CNRS. 1 pl. A. Briand 92195 MEUDON-BELLEVUE (France).
B. Pajot
Affiliation:
Groupe de Physique des Solides de l'E.N.S., Univ.Paris VII, Tour 23, 1 pl. Jussieu. 75251 PARIS Cedex 05 (France).
A. Jalil
Affiliation:
Laboratoire de Physique des Solides, CNRS. 1 pl. A. Briand 92195 MEUDON-BELLEVUE (France).
R. Mostefaoui
Affiliation:
Laboratoire de Physique des Solides, CNRS. 1 pl. A. Briand 92195 MEUDON-BELLEVUE (France).
R. Rahbi
Affiliation:
Laboratoire de Physique des Solides, CNRS. 1 pl. A. Briand 92195 MEUDON-BELLEVUE (France).
M. C. Bolssy
Affiliation:
RTC. rte de la Délivrande, 14001 CAEN (France).
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Abstract

We show that silicon acceptors can be neutralized in p-type GaAs: Si. SIMS analysis shows that the deuterium concentration closely follows the net acceptor concentration. Infrared absorption spectroscopy reveals lines at 2094.7cm-1 and 1514.5cm-1 in hydrogenated and deuterated samples respectively. The ratio r of the two frequencies is 1.383 indicating that the lines are related to hydrogen isotopes. The reduction of the intensity of the local vibrational mode (LVM) of SiAs after neutralization is consistent with the formation of SiAs-H bonds. From SIMS data, it is concluded that most of the hydrogen present in the passivated material is complexed with silicon. A microscopic model of the Si-H complex is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 337
Copyright
Copyright © Materials Research Society 1988

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References

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