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Interaction of Reactive Species Obtained by G-D Silane Decomposition with Si(111) and a-Si:H Surfaces

Published online by Cambridge University Press:  26 February 2011

S. A. Cruz  and
V. M. Mendez-Rosales
S. A. Cruz
Affiliation:
Instituto de Investigaciones en Materiales, UNAM, Apdo.Postal 70-360, 04510 Mexico, D.F.
V. M. Mendez-Rosales
Affiliation:
CINVESTAV-IPN, Unidad Mérida, Apdo.Postal 73, Cordemex 97310, Mérida, Yucatán, Mexico.
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Abstract

We calculate the average surface potential barrier for incorporation of H, Si, SiHb (n=1–4) into films of a-Si:H as well as crystalline Si(111) surfaces. In the first case a local amorphous configuration for the surface is employed through a representative cluster(Si29 H1 0 ) forming 5, 6, 7 Si atom rings. For the crystalline surface, several layers of Si atoms are considered. Pairwise superposition of combined Morse and Thomas-Fermi-Moliére interatomic potentials is assumed for the total interaction between the incoming species and the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 273
Copyright
Copyright © Materials Research Society 1987

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