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Interaction of Metallic Impurities Adsorbed on Si Wafers in SC1 Solution

Published online by Cambridge University Press:  25 February 2011

Hitoshi Okuda ,
Jiro Ryuta ,
Eturo Morita  and
Yasushi Shimanuki
Hitoshi Okuda
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro, Omiya, Saitama 330
Jiro Ryuta
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro, Omiya, Saitama 330
Eturo Morita
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro, Omiya, Saitama 330
Yasushi Shimanuki
Affiliation:
Mitsubishi Materials Silicon Corporation, 314 Kaneuchi Nishisangao, Noda, Chiba 278
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Abstract

Changes in the surface concentration of Fe, Ni, Cu and Zn on Si wafers processed in a NH 4OH / H2O2 / H2O (SC1) solution was investigated. The adsorption of Fe or Zn on Si wafers was not affected by the other impurities in the SC1 solution. However, the adsorption of Ni or Cu on Si wafers was obstructed by Fe, and was not obstructed by Zn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 399
Copyright
Copyright © Materials Research Society 1992

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References

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