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Interaction of in Atom Spin-Orbit States with Si(100) Surfaces

Published online by Cambridge University Press:  25 February 2011

Doeke J. Oostra ,
Russell V. Smilgys  and
Stephen R. Leone
Doeke J. Oostra
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, and Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO, 80309
Russell V. Smilgys
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, and Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO, 80309
Stephen R. Leone
Affiliation:
Staff member, Quantum Physics Division, National Institute of Standards and Technology.
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Abstract

Scattering and desorption of In from Si(100) is investigated. Laser induced fluorescence is used to probe the desorbing and or scattered species. Auger Electron Spectroscopy is used to study the composition on the surface. The results show that at surface temperatures below 820 K a two dimensional layer of In desorbs by a half order mechanism. This is explained by assuming two dimensional In islands on the surface. Above 820 K, desorption takes place by a first order mechanism. The desorption para-meters appear to be spin-orbit state specific. The desorption energy for In 2P3/2 is 2.8 ± 0.4 eV and for In 2P½ 2.5 ± 0.2 eV. The difference is equal to the difference in the spin-orbit energy. So far no specular scattering of In is observed, suggesting that the sticking coefficients are unity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 239
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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