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Interaction of Copper Film with Silicides

Published online by Cambridge University Press:  25 February 2011

Yow-Tzong Shy ,
Shyam P. Murarka ,
Carlton L. Shepard  and
William A. Lanford
Yow-Tzong Shy
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Shyam P. Murarka
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Carlton L. Shepard
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
William A. Lanford
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
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Abstract

Bilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 537
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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