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Interaction of Atonic Hydrogen with Ion Bombardment Induced Defects at Si/SiO2 Interfaces
Published online by Cambridge University Press: 22 February 2011
Abstract
Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.
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- Copyright © Materials Research Society 1993