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Interaction Between Implanted Ions and Intrinsic Defects in Silica

Published online by Cambridge University Press:  25 February 2011

R.H. Magruder ,
D.L. Kinser ,
R.A. Weeks  and
R.A. Zuhr
R.H. Magruder
Affiliation:
Belmont College, Nashville, TN
D.L. Kinser
Affiliation:
Vanderbilt University, Nashville, TN
R.A. Weeks
Affiliation:
Vanderbilt University, Nashville, TN
R.A. Zuhr
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

High purity silica (Spectrosil) samples were implanted with Ti, Cr, Mn, Fe and Cu at doses ranging from 1.0 to 5.0×1015 ions/cm2 at 160 keV and 2.6 μA/cm2. The optical absorption extinction coefficients per ion were measured from 1.8 to 6.0 eV. In all samples there was an increase in absorption over the unimplanted sample at energies ≥4.6 eV. The increase in absorption at 5.1 eV and 5.7 eV is attributed to B2(E”) centers and E’ centers respectively. The relative values of the extinction coefficients of these bands are attributed to the relative oxygen activities of the TMI relative to the SiO2 host substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 519
Copyright
Copyright © Materials Research Society 1990

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References

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