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Intense Visible Luminescence from Thermally-Oxidized Porous Silicon

Published online by Cambridge University Press:  28 February 2011

S. Miyazakj ,
K. Shiba ,
K. Sakamoto  and
M. Hirose
S. Miyazakj
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
K. Shiba
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
K. Sakamoto
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
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Abstract

Photoluminescence from porous silicon oxidized at 800 or 900°C in an N2 +O2 gas mixture has been investigated. The ideal passivation of the porous Si surface with thermally grown oxide results in stable, intense visible-light emission. The steady-state and time-resolved luminescence measured as functions of temperature and excitation power have indicated that a possible pathway for the light emission is the radiative recombination through localized states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 269
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Canham, L. T.: Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
[2] Lehmann, V. and Gosele, U.: Appl. Phys. Lett. 58, 856 (1991).Google Scholar
[3] Brandt, M. S., Fuchs, H. D., Stutzmann, M., Weber, J. and Cardona, M.: Solid State Commun. 81, 307 (1992).Google Scholar
[4] Friedersdorf, L. E. and Searson, P. C., Prokes, S. M., Glembocki, O. J. and Macaulay, J. M.: Appl. Phys. Lett. 60, 2285 (1992).Google Scholar
[5] Miyazaki, S., Shiba, K., Sakamoto, K. and Hirose, M.: Optoelectronics 7, 95 (1992).Google Scholar
[6] Tsai, C., Li, K.-H., Sarathy, J., Shih, S., Campbell, J. C., Hance, B. K. and White, J. M.: Appl. Phys. Lett. 59, 2814 (1991).Google Scholar
[7] Collins, R. T., Tischler, M. A. and Stathis, J. H.: Appl. Phys. Lett. 61, 1649 (1992).Google Scholar
[8] Ito, T., Ohta, T. and Hiraki, A.: Jpn. J. Appl. Phys. 31, L1 (1992).Google Scholar
[9] Yamada, M. and Kondo, K.: Jpn. J. Appl. Phys. 31, L993 (1992).Google Scholar
[10] Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B. K., and Koch, F.: Appl. Phys. Lett. 61, 943 (1992).Google Scholar
[11] Shiba, K., Sakamoto, K., Miyazaki, S. and Hirose, M.: Extended Abstracts of the 1992 Intern. Conf. on Solid State Devices and Materials, Tsukuba, 1992, p. 699 (J. Soc. Appl. Phys., Tokyo, 1992).Google Scholar
[12] Tischler, M. A., Collins, R. T., Stathis, J. H. and Tsang, J. C.: Appl. Phys. Lett. 60, 639 (1992).Google Scholar
[13] Zheng, X. L., Wang, W. and Chen, H. C.: Appl. Phys. Lett. 60, 986 (1992).Google Scholar
[14] Street, R. A.: Semiconductors and Semimetals, ed. Pankove, J. I. (Academic Press, Orlando, 1984) Vol. 21 B, Chapter 7, p. 222.Google Scholar