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Intense RT Visible Photoluminescence from Anodized Amorphous and Nanocrystalline Silicon Films

Published online by Cambridge University Press:  28 February 2011

E. Bustarret ,
J. C. Bruyere ,
F. Muller  and
M. Ligeon
E. Bustarret
Affiliation:
LEPES-CNRS, BP166, F-38042 Grenoble Cedex 9, France
J. C. Bruyere
Affiliation:
LEPES-CNRS, BP166, F-38042 Grenoble Cedex 9, France
F. Muller
Affiliation:
LSP-UJF, BP 807, F-38402 St Martin d'Hères Cedex, France.
M. Ligeon
Affiliation:
LSP-UJF, BP 807, F-38402 St Martin d'Hères Cedex, France.
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Abstract

Heavily Boron-doped micrometer-thick amorphous (a-Si:B:H) or nanocrystalline (nc-Si) silicon layers have been deposited on a variety of conductive substrates by the 50 KHz PECVD of SiH4 / B2H6 / H2 mixtures at 320°C. These films have been partially electro-oxidized in a HF solution and then anodically oxidized in water in a manner similar to that yielding luminescent porous monocrystalline silicon layers (PcSL). Although the anodized films are x-ray amorphous, they yield intense luminescence properties at room temperature very similar to those of anodically oxidized PcSL with a similar vibrational spectrum. In both anodically oxidized materials, aging is shown to improve the external quantum efficiency. In amorphous anodized layers, optical microscopy under UV excitation showed strongly luminescent strain-related heterogeneities (20 μ,m in diameter) connected by non luminescent channels. The incidence of our results on the current debate about the origin of visible room-temperature luminescence in porous silicon and Si:O:H systems is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 39
Copyright
Copyright © Materials Research Society 1993

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