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The Integration of the Ferromagnetic Inductors into the Standard CMOS Chip

Published online by Cambridge University Press:  09 August 2012

Oleg Nizhnik ,
Olinver M. Vinluan ,
Kohei Higuchi ,
Koji Sonoda ,
Masatoshi Ishii  and
Kazusuke Maenaka
Oleg Nizhnik
Affiliation:
Maenaka Human-Sensing Fusion Project, Japan Science and Technology Agency, Open Labs., Bldg, University Of Hyogo 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Olinver M. Vinluan
Affiliation:
Maenaka Human-Sensing Fusion Project, Japan Science and Technology Agency, Open Labs., Bldg, University Of Hyogo 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Kohei Higuchi
Affiliation:
Maenaka Human-Sensing Fusion Project, Japan Science and Technology Agency, Open Labs., Bldg, University Of Hyogo 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Koji Sonoda
Affiliation:
Maenaka Human-Sensing Fusion Project, Japan Science and Technology Agency, Open Labs., Bldg, University Of Hyogo 2167 Shosha, Himeji, Hyogo, 671-2280, Japan Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Masatoshi Ishii
Affiliation:
Maenaka Human-Sensing Fusion Project, Japan Science and Technology Agency, Open Labs., Bldg, University Of Hyogo 2167 Shosha, Himeji, Hyogo, 671-2280, Japan Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Kazusuke Maenaka
Affiliation:
Maenaka Human-Sensing Fusion Project, Japan Science and Technology Agency, Open Labs., Bldg, University Of Hyogo 2167 Shosha, Himeji, Hyogo, 671-2280, Japan Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
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Abstract

An inductor in standard CMOS process having an inductance of 52 nH and a quality factor of 1.5 at frequency equal to 80 Mhz was fabricated. The polymer passivation layer of the standard CMOS inductor was etched out. The silicon substrate under the inductor, having a thickness of 280 μm was also etched out by deep reactive ion etching (DRIE). Ferrite material ZnFe2O4 and amorphous material Fe4.7Co70.3Si15B10 was then sputtered on top of the inductor sequentially. The same sputtering procedure was also performed into the bottom of the inductor. The result is an inductor that is sandwiched by multiple ferromagnetic layers. The inductance of the new ferromagnetic inductor has increased by 15% from 52 nH to 60 nH. The quality factor has also increased by 20% from 1.5 to 1.8.

Keywords

ferromagneticlayeredmicroelectronics
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1427: Symposium B – Heterogeneous Integration Challenges of MEMS, Sensor and CMOS LSI , 2012 , mrss12-1427-b01-03
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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