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Integration of PLZT and BST Family Oxides with GaN.

Published online by Cambridge University Press:  03 September 2012

Andrei V. Osinsky ,
Vladimir N. Fuflyigin ,
Feiling Wang ,
Peter I. Vakhutinsky  and
Peter E. Norris
Andrei V. Osinsky
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Vladimir N. Fuflyigin
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Feiling Wang
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Peter I. Vakhutinsky
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Peter E. Norris
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
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Abstract

Recent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 [.proportional]m by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5.10−8 A/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.12
Copyright
Copyright © Materials Research Society 1999

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References

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