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Integration of InxGa1−xN Laser Diodes with Dissimilar Substrates by Laser Lift-off

Published online by Cambridge University Press:  17 March 2011

William S. Wong ,
Michael Kneissl ,
Ping Mei ,
David W. Treat ,
Mark Teepe  and
Noble M. Johnson
William S. Wong
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304
Michael Kneissl
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304
Ping Mei
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304
David W. Treat
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304
Mark Teepe
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304
Noble M. Johnson
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Continuous-wave (cw) indium-gallium nitride (InGaN) multiple-quantum-well (MQW) laser diodes (LDs) were successfully transferred from sapphire onto copper and diamond substrates using a two-step laser lift-off (LLO) process. Reduced threshold currents and increased differential quantum efficiencies were measured for LDs on Cu due to a 50% reduction of the thermal impedance. Light output for LDs on Cu was three times greater than comparable LDs on sapphire with a maximum output of 30 mW. Increased light output for LDs on diamond were also measure with a maximum output of 80 mW.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G12.2
Copyright
Copyright © Materials Research Society 2001

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References

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