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Integrated CVD-PVD Al Plug Process for Sub-Quarter Micron Devices: Effects of Underlayer on the Via Filling and the Microstructure of the Al Film

Published online by Cambridge University Press:  17 March 2011

Won-Jun Lee ,
Jung Joo Kim ,
Jun Ki Kim ,
Jin Won Park ,
Hyug Jin Kwon ,
Heung Lak Park  and
Sa-Kyun Rha
Won-Jun Lee
Affiliation:
Memory R & D Division, Hyundai Electronics Industries, Ichon, 467-701, KOREA
Jung Joo Kim
Affiliation:
Memory R & D Division, Hyundai Electronics Industries, Ichon, 467-701, KOREA
Jun Ki Kim
Affiliation:
Memory R & D Division, Hyundai Electronics Industries, Ichon, 467-701, KOREA
Jin Won Park
Affiliation:
Memory R & D Division, Hyundai Electronics Industries, Ichon, 467-701, KOREA
Hyug Jin Kwon
Affiliation:
Memory R & D Division, Hyundai Electronics Industries, Ichon, 467-701, KOREA
Heung Lak Park
Affiliation:
Memory R & D Division, Hyundai Electronics Industries, Ichon, 467-701, KOREA
Sa-Kyun Rha
Affiliation:
Department of Materials Engineering, Taejon National University of Technology, Taejon, 300-717, KOREA
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Abstract

The integrated CVD-PVD Al plug process was successfully applied to a sub-quarter micron device for the simultaneous formation of plugs and wires. The effects of the underlayer on the via filling and the microstructure of the CVD-PVD Al films were investigated. Three types of underlayers were examined in this work: the Ti film deposited by the ionized PVD (I-PVD) method, the MOCVD TiN film stacked on the I-PVD Ti film, and the PVD Al film deposited on the I-PVD Ti film. Excellent via filling was achieved by employing the MOCVD TiN/I-PVD Ti or the PVD Al/I-PVD Ti as an underlayer. When only I-PVD Ti film was used as an underlayer, complete via filling was not obtained, because the CVD Al film sealed the top of vias. The CVD-PVD Al film deposited on the PVD Al/I-PVD Ti underlayer also showed excellent crystallographic texture of Al <111> and surface morphology, which is superior to those of the CVD-PVD Al film deposited on the MOCVD TiN/I-PVD Ti underlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D8.1.1
Copyright
Copyright © Materials Research Society 2000

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References

1. Kim, J. K., U. S. Pat., 5,804,501 (1998).Google Scholar
2. Beinglass, I. and Naik, M., Thin Solid Films, 320, 35 (1998).10.1016/S0040-6090(97)01063-8Google Scholar
3. Konecni, A., Dixit, G., Russell, N. M., Luttmer, J. D. and Havemann, R. H., Thin Solid Films, 320, 52 (1998).10.1016/S0040-6090(97)01064-XGoogle Scholar
4. Gignac, L. M., Rodbell, K. P., Clevenger, L. A., Iggulden, R. C., Schnabel, R. F., Weber, S. J., Lavoie, C., Cabral, C. Jr., DeHaven, P. W., Wang, Y.-Y. and Boettcher, S. H., Advanced Metallization Conference in 1997 (MRS, Warrendale, 1998) p. 79.Google Scholar
5. Lee, W.-J., Kim, B. Y., Han, S. Y., Lee, J. W., Kim, J. K. and Park, J. W., Jpn. J. Appl. Phys., 39, (2000) (in press).Google Scholar
6. Lee, W.-J. and Park, J. W., Thin Solid Films, submitted.Google Scholar
7. Vaidya, S. and Sinha, A. K., Thin Solid Films, 75, 253 (1981).10.1016/0040-6090(81)90404-1Google Scholar
8. Knorr, D. B., Merchant, S. M., Biberger, M. A., J. Vac. Sci. Technol. B, 16, 2734 (1998).10.1116/1.590265Google Scholar