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Instability of The Electron-Hole Plasma and its Possible Relation With Melting

Published online by Cambridge University Press:  15 February 2011

Monique Combescot
Affiliation:
Groupe de physique des solides de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
Julien Bok
Affiliation:
Groupe de physique des solides de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
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Abstract

We show that the softening of the T.A. phonon mode produces an instability in the electron-hole plasma of a silicon-like semiconductor and suggest that this instability can be the mechanism for melting of this type of material. This allows us to estimate the characteristics of a laser pulse which are necessary to modify the usual melting, i.e. which would lead to a substantial decrease of the melting temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1.Van Vechten, J. A., J. Phys. (Paris) Colloquy 41, C415 (1980).Google Scholar
2.Heine, V., Van Vechten, J. A., Phys. Rev. B 13, 1622 (1976).Google Scholar
3.Combescot, M., J. Bok, Phys. Rev. Lett. 48, 1413 (1982).Google Scholar
4.Combescot, M., Phys. Lett. 85 A, 308 (1981).Google Scholar