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Instabilities in the Mechanical Stress in Deposited SiO2 Films Caused by Thermal Treatments

Published online by Cambridge University Press:  25 February 2011

Bharat Bhushan  and
S.P. Murarka
Bharat Bhushan
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY 12180
S.P. Murarka
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY 12180
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Abstract

Using an in-situ stress measurement technique that measures stress as a function of annealing temperature, instabilities in mechanical stress induced by heat treatment in a variety of doped/undoped SiO2 films deposited by APCVD, LPCVD and PECVD techniques have been investigated. A large hysteresis in mechanical stress, caused by first heat treatment to which the as-deposited films are subjected, has been observed in films deposited by APCVD/LPCVD techniques. No such hysteresis is obsesrved in films deposited by PECVD technique. Hysteresis in APCVD/LPCVD films is found to vanish once the films are heat treated at or above 800°C. The results are discussed in terms of oxide densification, the presence of hydrogenous species, and phosphorous.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 463
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Adams, A.C. in “VLSI Technology” Edited by Sze, S.M., Chapter 6 McGraw-Hill Book Company (1988).Google Scholar
[2] Kern, W., Schnable, G.L. and Fischer, A.W., RCA Rev. 37, 3 (1976).Google Scholar
[3] Adams, A.C., Alexander, F.B., Capio, C.D., and Smith, T.E., J.Electrochem. Soc. 128, 1545 (1981).CrossRefGoogle Scholar
[4] Mattson, Brad, Solid State Technology 60, Jan. (1980).Google Scholar
[5] Smolinsky, G. and Wendling, T.P.H.F., J. Electrochem. Soc. 132, 950 (1985).CrossRefGoogle Scholar
[6] Sunami, H., Itoh, Y. and Sato, K., J. Appl. Phys. 41, 5115 (1970).CrossRefGoogle Scholar
[7] Learn, A.J., J. Electrochem Soc. 132, 405 (1985).CrossRefGoogle Scholar
[8] Lathlaen, R. and Diehl, D.A., J. Electrochem. Soc. 116, 620 (1969).CrossRefGoogle Scholar
[9] Sinha, A.K., Levinstein, H.J. and Smith, T.E., J. Appl. Phys. 49, 2423 (1978).CrossRefGoogle Scholar
[10] Kern, W., RCA Rev. 31, 55 (1976).Google Scholar
[11] Lanford, W.A., Trautvetter, H.P., Ziegler, J. and Keller, J., Appl. Phys. Lett. 28, 566 (1976) .CrossRefGoogle Scholar
[12] Jaccodine, R.J. and Schlegel, W.A., J. Appl. Phys. 37, 2429 (1966).CrossRefGoogle Scholar
[13] Blech, I. and Cohen, U., J. Appl. Phys. 53, 4202 (1982).CrossRefGoogle Scholar
[14] Murarka, S.P. and Retajczk, T.F. Jr. J. Appl. Phys. 54, 2069 (1983).CrossRefGoogle Scholar
[15] “Thermophysical properties of Matter” Edited by Toulokian, U.S., Plenum New York (1977).Google Scholar
[16] Pliskin, W.A., J. Vac. Sci. Technol. 14, 1064 (1977).CrossRefGoogle Scholar
[17] Nassua, K., Levy, R.A. and Chadwick, D.L., J. Electrochem. Soc. 132, 409 (1985).CrossRefGoogle Scholar