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In-situ XRD and FIB microscopy studies of the dynamics of intermetallic phase formation in thin layer Cu/Sn films for low-temperature isothermal diffusion soldering

Published online by Cambridge University Press:  08 March 2011

Harald Etschmaier ,
Jiří Novák ,
Hannes Eder  and
Peter Hadley
Harald Etschmaier
Affiliation:
Unit Process Development, Infineon Technologies Austria AG Villach 9500, Siemensstrasse 2, Austria Institute of Solid State Physics, Graz University of Technology 8010, Petersgasse 16, Austria
Jiří Novák
Affiliation:
Institute of Solid State Physics, Graz University of Technology 8010, Petersgasse 16, Austria
Hannes Eder
Affiliation:
Unit Process Development, Infineon Technologies Austria AG Villach 9500, Siemensstrasse 2, Austria
Peter Hadley
Affiliation:
Institute of Solid State Physics, Graz University of Technology 8010, Petersgasse 16, Austria
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Abstract

In this contribution we report on the dynamics of the phase evolution in electrochemically deposited Sn thin films on copper coated substrates studied by in-situ X-ray diffraction (XRD) and Focused Ion Beam Microscopy (FIB). The data obtained is used to extract fundamental parameters such as the activation energy and the rate constant of the reaction. Results indicate that the formation of intermetallic phases in these thin layers, in which the grain size exceeds the layer thickness, is not limited by diffusion but rather by reaction kinetics.

Keywords

solderingpackagingdiffusion
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1318: Symposium SS/TT/UU/VV – Advances in Spectroscopy and Imaging of Surfaces and Nanostructures , 2011 , mrsf10-1318-uu06-03
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Jacobson, D. and Sangha, S., Soldering & Surface Mount Technology 8, 12–15 (1996).Google Scholar
2. Jacobson, D. and Humpston, G., Soldering & Surface Mount Technology 4, 27–32 (1992).Google Scholar
3. Tu, K., Materials Chemistry and Physics 46, 217–223.Google Scholar
4. Tu, K., Acta Metallurgica 21, 347–354 (1973).Google Scholar
5. Tu, K.N. and Thompson, R.D., Acta Metallurgica 30, 947–952 (1982).Google Scholar
6. Kang, S.K., Rai, R.S., and Purushothaman, S., Journal of Electronic Materials 25, 1113–1120 (1996).Google Scholar
7. Bader, S., Gust, W., and Hieber, H., Acta Metallurgica Et Materialia 43, 329–337 (1995).Google Scholar
8. Miric, A.Z. and Grusd, A., Soldering & Surface Mount Technology 10, 19–25 (1998).Google Scholar
9. Harris, P.G. and Chaggar, K.S., Soldering & Surface Mount Technology 10, 38–52 (1998).Google Scholar
10. Flinn, P.A. and Waychunas, G.A., J. Vac. Sci. Technol. B 6, 1749–1755 (1988).Google Scholar
11. Massalski, T., (1996).Google Scholar
12. Westgren, A. and Phragmen, G., Z. Anorg. Chem 175, 80 (1928).Google Scholar
13. Dyson, B.F., Appl, J.. Phys. 38, 3408 (1967).Google Scholar
14. Warwick, M.E. and Muckett, S.J., Circuit World 9, 5–11 (1993).Google Scholar
15. Kay, P. and McKay, C.A., Trans. Inst. Met. Fin. 57, 169 (1979).Google Scholar
16. Kay, P.J. and McKay, C.A., Trans. Inst. Met. Fin. 54, 68–74 (1976).Google Scholar
17. Thwaites, C.J., Trans. Inst. Met. Fin. 43, 143 (1965).Google Scholar